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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB980 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) *Good Linearity of hFE *Wide Area of Safe Operation APPLICATIONS *Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w -120 V -120 V -5 V -6 A -10 A 70 W 3 .cn mi e ICP Collector Current-Pulse Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB980 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -2.0 V VBE(on) Base -Emitter On Voltage IC= -4A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -50 A IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 A hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE-2Classifications Q 60-120 S 80-160 w w P 100-200 scs .i w IC= -4A; VCE= -5V IC= -0.5A; VCE= -5 V; f= 1MHz .cn mi e 60 20 200 20 MHz IE= 0; VCB= -10V; f= 1MHz 150 pF isc Websitewww.iscsemi.cn 2 |
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